symbol v ds v gs i dm i as e as t j , t stg symbol typ max 15 20 45 60 r q jc 1.1 1.5 1.3 w junction and storage temperature range p d c 83 33 -55 to 150 t c =100c 2.1 w continuous drain current b,g maximum units parameter t c =25c t c =100c 30 i d maximum junction-to-ambient a steady-state 85 67 avalanche current 85 power dissipation a t a =25c p dsm t a =70c drain-source voltage single avalanche energy l=0.1mh pulsed drain current continuous drain current a r q ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 power dissipation b t c =25c gate-source voltage 361 mj maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s 160 a t a =70c 20 t a =25c i dsm 25 AON6404 30v n-channel mosfet product summary v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 2.2m w (v gs = 10v) r ds(on) < 3.8m w (v gs = 4.5v) esd protected 100% uis tested 100% rg tested general description the AON6404 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on). this device is ideal for load switch and battery protection applications. g ds top view 1 2 3 4 8 7 6 5 pin1 dfn5x6 top view bottom view alpha & omega semiconductor, ltd. www.aosmd.com
AON6404 symbol min typ max units bv dss 30 34 v 1 t j =55c 5 i gss 10 ua v gs(th) 1.4 1.7 2 v i d(on) 160 a 1.8 2.2 t j =125c 2.5 3.1 3 3.8 m w g fs 75 s v sd 0.87 1.3 v i s 85 a c iss 7420 9000 pf c oss 1045 pf c rss 720 pf r g 1.2 1.8 w q g (10v) 118 155 nc q g (4.5v) 54 nc q gs 29 nc q gd 22 nc t d(on) 17 ns t r 18 ns t d(off) 67 ns t f 25 ns t rr 60 80 ns q rr 66 nc continuous drain current b 25 20 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =20a i s =85a,v gs =0v v ds =5v, i d =20a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 16v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ m s a: the value of r ja is measured with the device in a still air enviro nment with t a =25c, with the device mounted on 1 in2 fr-4 board with 2oz. copper, in a still air environment with t a=25 b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nk is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. maximum current is limited by the package. rev4: may 2011 alpha & omega semiconductor, ltd. www.aosmd.com
AON6404 typical electrical and thermal characteristics 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) 3.5v v gs =10v,6v,4.5v,4v 3v 2v 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =4.5v v gs =10v 1 2 3 4 5 6 2 5 8 11 14 17 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AON6404 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 10 100 1000 10000 100000 1.00e-06 1.00e-04 1.00e-02 1.00e+00 pulse width (s) figure 10: single pulse power rating junction-to-case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100us 10us dc r ds(on) limited t j(max) =150c t c =25c 1ms 10ms v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max ) =150c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com
AON6404 typical electrical and thermal characteristics 50 70 90 110 130 150 1.000e-06 1.000e-05 1.000e-04 1.000e-03 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note b,g) current rating i d (a) 1 10 100 1000 10000 1.00e-03 1.00e-01 1.00e+01 1.00e+03 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note a) power (w) 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note a) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AON6404 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com
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